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Proceedings Paper

Angled broad-area semiconductor lasers to emit high output power with good beam quality
Author(s): Yi-Shin Su; Chih-Hung Tsai; Chia-Wei Tsai; Din Ping Tsai; Ching-Fuh Lin
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Paper Abstract

A new type of laser diodes with good beam quality is introduced. The far-field divergence angle can be close to diffraction-limited value. In the new design, the direction of the waveguide on a broad area Fabry-Perot laser diode is tilted at an angle from the facet normal. This design is called “angled broad area laser diode”. In this tilted waveguide device, filamentation is not observed. The far-field divergence angle is generally within 5 times the diffraction-limited value. This tilted broad area laser is advantageous over the angled grating DFB laser because the difficulty of matching the grating period with peak gain wavelength is avoided.

Paper Details

Date Published: 11 May 2004
PDF: 9 pages
Proc. SPIE 5365, Novel In-Plane Semiconductor Lasers III, (11 May 2004); doi: 10.1117/12.525576
Show Author Affiliations
Yi-Shin Su, National Taiwan Univ. (Taiwan)
Chih-Hung Tsai, National Taiwan Univ. (Taiwan)
Chia-Wei Tsai, National Taiwan Univ. (Taiwan)
Din Ping Tsai, National Taiwan Univ. (Taiwan)
Ching-Fuh Lin, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 5365:
Novel In-Plane Semiconductor Lasers III
Claire F. Gmachl; David P. Bour, Editor(s)

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