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Proceedings Paper

High-power extraction of 340- to 350-nm UV LEDs
Author(s): Toshio Nishida; Tomoyuki Ban; Hisao Saito; Naoki Kobayashi; Toshiki Makimoto
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Paper Abstract

The potential of high power extraction from AlGaN-based ultraviolet light emitting diodes (UV-LEDs) is described. Improvements of UV-LEDs are shortly introduced from the viewpoints of nitride epitaxial growth, heterostructure optical characteristics based on the internal polarization field, and p-n junction design. The UV light extraction enhancement by utilizing the GaN-free transparent UV-LED structure and highly efficient UV-LEDs fabricated by introducing a high-quality AlN template on sapphire substrate are described. The maximum output powers are 8.6 mW and 5.5 mW at an injection current of less than 150 mA, at the emission wavelength of 350 nm and 340 nm, respectively. The highest external quantum efficiencies are 2.2 and 1.7%, respectively. The application to white lighting and the potential of the high-flux UV-extraction utilizing bulk AlN substrate are also investigated.

Paper Details

Date Published: 6 July 2004
PDF: 13 pages
Proc. SPIE 5359, Quantum Sensing and Nanophotonic Devices, (6 July 2004); doi: 10.1117/12.524560
Show Author Affiliations
Toshio Nishida, NTT Basic Research Labs. (Japan)
Tomoyuki Ban, NTT Electronics (Japan)
Hisao Saito, NEL TechnoSupport (Japan)
Naoki Kobayashi, Univ. of Electro-Communications (Japan)
Toshiki Makimoto, NTT Basic Research Labs. (Japan)

Published in SPIE Proceedings Vol. 5359:
Quantum Sensing and Nanophotonic Devices
Manijeh Razeghi; Gail J. Brown, Editor(s)

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