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Proceedings Paper

Angled stripe InGaAsP/InP SLED fabricated by low- damage inductively coupled plasma dry etching
Author(s): Jun Zhang; Xiaodong Huang; Jin Chang; Yingjun Liu; Yi Gan; Linsong Li; Dingli Wang; Tao Liu; Shan Jiang; Ligang Deng
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Paper Abstract

We successfully fabricated the angled strip DC-PBH style SLED devices by using low damage ICP dry etching technology. The mesa of DC-PBH SLED was formed by Cl2/N2 ICP dry etching process. The low DC bias (<100 eV) of ICP etching technology can reduce the damage caused by ordinary RIE technique and Cl2/N2 based process can get rid of chemical damage caused by CH4/H2. High out-put power SLED device was obtained by using low damage ICP dry etching, the out-put power is 2 mW at 100 mA inject current (CW) at 25°C. Through optimized the angle of the active strip and AR optical film design, the full width of the half maximum (FWHM) of the spectrum at 2 mW out-put power can reach 46.4nm and the ripple of the SLED spectrum is low down to 0.4 dB.

Paper Details

Date Published: 12 May 2004
PDF: 4 pages
Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.523504
Show Author Affiliations
Jun Zhang, Accelink Technologies Co., Ltd. (China)
Xiaodong Huang, Accelink Technologies Co., Ltd. (China)
Jin Chang, Accelink Technologies Co., Ltd. (China)
Yingjun Liu, Accelink Technologies Co., Ltd. (China)
Yi Gan, Accelink Technologies Co., Ltd. (China)
Linsong Li, Accelink Technologies Co., Ltd. (China)
Dingli Wang, Accelink Technologies Co., Ltd. (China)
Tao Liu, Accelink Technologies Co., Ltd. (China)
Shan Jiang, Accelink Technologies Co., Ltd. (China)
Ligang Deng, Oxford Instruments Plc (United Kingdom)

Published in SPIE Proceedings Vol. 5280:
Materials, Active Devices, and Optical Amplifiers
Connie J. Chang-Hasnain; Dexiu Huang; Yoshiaki Nakano; Xiaomin Ren, Editor(s)

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