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Proceedings Paper

Chemical structure of low-temperature plasma-deposited silicon nitride thin films
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Paper Abstract

The infrared transmission (400-4000cm-1) was measured for a series of approximately 0.5μm thick NH3/SiH4 and plasma deposited silicon nitride thin film alloys prepared at temperatures between 80 and 300°C using fixed process parameters. It is demonstrated from a detailed analysis of the infrared spectra that the 'condensation' mechanism is not thermally activated as previously reported, but is an entropic process required to stabilise the film structure. Modelling of the various absorption bands in the infrared transmission spectrum using a multiple Lorentzian oscillator parametric model leads to the proposition that thermally activated 'condensation' (networking) is really the formation of N(-Si≡)3 bonds from the reaction between amine branches. Evidence that the absorption feature around 640cm-1, usually attributed to Si-H (bending), is N-H related is also discussed.

Paper Details

Date Published: 2 April 2004
PDF: 8 pages
Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); doi: 10.1117/12.523243
Show Author Affiliations
Martin T.K. Soh, Univ. of Western Australia (Australia)
Nick Savvides, CSIRO (Australia)
Charles A. Musca, Univ. of Western Australia (Australia)
John M. Dell, Univ. of Western Australia (Australia)
Lorenzo Faraone, Univ. of Western Australia (Australia)

Published in SPIE Proceedings Vol. 5276:
Device and Process Technologies for MEMS, Microelectronics, and Photonics III
Jung-Chih Chiao; Alex J. Hariz; David N. Jamieson; Giacinta Parish; Vijay K. Varadan, Editor(s)

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