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Proceedings Paper

Apparent positive resistance and temperature effect on I-V characteristics of RTD
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Paper Abstract

We have measured the I-V characteristics of the Resonant tunneling diode (RTD) fabricated by ourselves. Basing on the measured results, several questions have been analyzed and discussed: (1) Temperature effects on I-V characteristics; (2) “The Apparent positive resistance phenomena” in negative resistance region. The analysis and discussion on above questions are very useful and helpful for design and fabrication of RTD.

Paper Details

Date Published: 2 April 2004
PDF: 6 pages
Proc. SPIE 5276, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, (2 April 2004); doi: 10.1117/12.522799
Show Author Affiliations
Changyun Miao, Tianjin Polytechnic Univ. (China)
Weilan Guo, Tianjin Univ. (China)
Ping-Juan Niu, Tianjin Polytechnic Univ. (China)
Hongwei Liu, Tianjin Polytechnic Univ. (China)
Hong-Qiang Li, Tianjin Polytechnic Univ. (China)
Dan Qu, Tianjin Polytechnic Univ. (China)
Zhe Xu, Tianjin Polytechnic Univ. (China)

Published in SPIE Proceedings Vol. 5276:
Device and Process Technologies for MEMS, Microelectronics, and Photonics III
Jung-Chih Chiao; Alex J. Hariz; David N. Jamieson; Giacinta Parish; Vijay K. Varadan, Editor(s)

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