Share Email Print

Proceedings Paper

Piezoresistive pressure sensors in CVD diamond for high-temperature applications
Author(s): Ralf Otterbach; Ulrich Hilleringmann
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The fabrication of piezo-resistive pressure sensors for high temperature applications by the selective removal of CVD-diamond is limited due to the jutting physical properties of this material, which result in insufficient etching rates. A novel technique with distinctly increased etching rates due to a modified sample arrangement inside of a commercially available reactive ion etching (RIE) reactor overcomes this limitation by a restricted plasma volume. Rates up to 334 nm/min imply an increase of more than one order of magnitude in comparison with additional measurements utilizing a standard etching technique. Furthermore, the electrical response of a fabricated sensor on pressure is demonstrated.

Paper Details

Date Published: 2 September 2003
PDF: 4 pages
Proc. SPIE 5253, Fifth International Symposium on Instrumentation and Control Technology, (2 September 2003); doi: 10.1117/12.521928
Show Author Affiliations
Ralf Otterbach, Univ. of Paderborn (Germany)
Ulrich Hilleringmann, Univ. of Paderborn (Germany)

Published in SPIE Proceedings Vol. 5253:
Fifth International Symposium on Instrumentation and Control Technology
Guangjun Zhang; Huijie Zhao; Zhongyu Wang, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?