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Proceedings Paper

Correlation between the g-r noise in semiconductor lasers and device reliability
Author(s): Guijun Hu; Yadong Sun; Hongmei Zhang; Jing Li; Yingxue Shi; Jiawei Shi
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Paper Abstract

The g-r noise in semiconductor lasers and its relation with device quality and reliability are studied. The results indicated that g-r noise has close relation with semiconductor defects, the devices with g-r noise degrade rapidly during electric aging, the P-I characteristics of the devices evidently become bad, or the devices have failed after aging. By measuring g-r noise in semiconductor lasers, the devices quality and reliability can be estimated, which is an effective and non-destructive method.

Paper Details

Date Published: 12 May 2004
PDF: 4 pages
Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); doi: 10.1117/12.521647
Show Author Affiliations
Guijun Hu, Jilin Univ. (China)
Yadong Sun, Jilin Univ. (China)
Hongmei Zhang, Jilin Univ. (China)
Jing Li, Jilin Univ. (China)
Yingxue Shi, Jilin Univ. (China)
Jiawei Shi, Jilin Univ. (China)

Published in SPIE Proceedings Vol. 5280:
Materials, Active Devices, and Optical Amplifiers
Connie J. Chang-Hasnain; Dexiu Huang; Yoshiaki Nakano; Xiaomin Ren, Editor(s)

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