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Proceedings Paper

Low-stress stencil masks using a doping method
Author(s): Hideyuki Eguchi; Toshiaki Kurosu; Takashi Yoshii; Hiroshi Sugimura; Kojiro Itoh; Akira Tamura
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Paper Abstract

Membrane stress control is one of the challenges for the commercial success of the stencil masks, such as electron projection lithography (EPL) and low energy electron-beam proximity projection lithography (LEEPL), since a stencil mask has perforation patterns in a membrane with image placement meeting stringent error budget. First, stress-induced distortions of stencil mask membranes were simulated by a finite element method (FEM). Second, we showed how the membrane stress varies with dopant concentration, using a pressure bulge method for stress measurements of die-size specimens. The results show doping SOI substrates provide a low-stress membrane. Third, correlation between the pressure bulge method and resonance frequency technique (RFT) was investigated and showed acceptable agreement. Fourth, stress distribution measurements were taken using the RFT for a low-stress 200-mm EPL mask. Average stress value and cross-mask stress variations were 11.2 MPa and ± 1.3 MPa respectively. Therefore, we revealed reliable stress distribution data across a 200-mm EPL mask and confirmed the doping method using SOI substrate is proper approach to fabricate a low-stress 200-mm stencil mask, with high uniformity of membrane stress, for EPL and LEEPL.

Paper Details

Date Published: 17 December 2003
PDF: 9 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.519856
Show Author Affiliations
Hideyuki Eguchi, Toppan Printing Co., Ltd. (Japan)
Toshiaki Kurosu, Toppan Printing Co., Ltd. (Japan)
Takashi Yoshii, Toppan Printing Co., Ltd. (Japan)
Hiroshi Sugimura, Toppan Printing Co., Ltd. (Japan)
Kojiro Itoh, Toppan Printing Co., Ltd. (Japan)
Akira Tamura, Toppan Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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