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Proceedings Paper

Radiation effects in photoconductive MCT MBE heterostructures
Author(s): Aleksander V. Voitsekhovskii; Andrej P. Kokhanenko; Aleksander G. Korotaev; D. V. Grigor'ev; Vasily S. Varavin; Sergey A. Dvoretsky; Yuri G. Sidorov; Nikolay N. Mikhailov
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Paper Abstract

The first results on a radiation stability investigation of mercury cadmium telluride (MCT) films, grown by molecular beam epitaxy (MBE) are represented. The samples were irradiated by high energy electron beams and gamma rays. Electrophysical and photoelectric parameters of MCT epilayers were measured. Volume material was measured too for the checking with MBE-grown one. MBE epifilms were irradiated on a pulsed electron accelerator with electron energy 1-2 MeV and current density less than 1 μA/cm2 for several fluences. Also MCT epitaxial heterostructures were irradiated by Co60 gamma rays. The same experiments were carried out for volume material. The analysis of dependence of Hall coefficient and conductivity from temperature and magnetic field (B) for p- and n- type samples was made. The irradiation of epilayers and volume MCT in the investigated range of irradiation fluences does not give both creation of electrical active damages in high concentrations and reconstruction of initial defects. Thus, MBE films of MCT have the high radiation stability to an electron and gamma irradiation. The obtained first results allow us to speak about high performance of explored MCT epilayers.

Paper Details

Date Published: 22 October 2003
PDF: 5 pages
Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); doi: 10.1117/12.519767
Show Author Affiliations
Aleksander V. Voitsekhovskii, Siberian Physico-Technical Institute (Russia)
Andrej P. Kokhanenko, Siberian Physico-Technical Institute (Russia)
Aleksander G. Korotaev, Siberian Physico-Technical Institute (Russia)
D. V. Grigor'ev, Siberian Physico-Technical Institute (Russia)
Vasily S. Varavin, Institute of Semiconductor Physics (Russia)
Sergey A. Dvoretsky, Institute of Semiconductor Physics (Russia)
Yuri G. Sidorov, Institute of Semiconductor Physics (Russia)
Nikolay N. Mikhailov, Siberian Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 5136:
Solid State Crystals 2002: Crystalline Materials for Optoelectronics
Jaroslaw Rutkowski; Antoni Rogalski, Editor(s)

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