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Proceedings Paper

DC and AC conductivity of PbSe/Si structures grown by pulsed laser ablation methods
Author(s): Waclaw Bala; Roman Rumianowski; Andrzej Korcala; Zygmunt Turlo
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Paper Abstract

In this paper we report the result of investigation of the electrical transport in PLD grown n-PbSe/n-Si heterojunction by DC and AC current measurement techniques. This characterization method is a well-suited and simple technique to study the interface between two semiconductors. The Si substrates are highly doped (ρ = 0.45 Ωcm), and consequently most of the heterojunction depletion layer falls in the PbSe epilayer. Fabrication of PbSe thin films on Si substrates by the pulsed laser deposition(PLD) method has been demonstrated. The films were characterized by X-ray diffraction analysis.

Paper Details

Date Published: 22 October 2003
PDF: 6 pages
Proc. SPIE 5136, Solid State Crystals 2002: Crystalline Materials for Optoelectronics, (22 October 2003); doi: 10.1117/12.519672
Show Author Affiliations
Waclaw Bala, Nicolaus Copernicus Univ. (Poland)
Roman Rumianowski, Warsaw Univ. of Technology (Poland)
Andrzej Korcala, Nicolaus Copernicus Univ. (Poland)
Zygmunt Turlo, Nicolaus Copernicus Univ. (Poland)

Published in SPIE Proceedings Vol. 5136:
Solid State Crystals 2002: Crystalline Materials for Optoelectronics
Jaroslaw Rutkowski; Antoni Rogalski, Editor(s)

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