Share Email Print
cover

Proceedings Paper

Examination of various endpoint methods for chrome mask etch
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Accurate determination of endpoint is important for creating a repeatable process that maximizes sidewall profile angle and resist selectivity while maintaining a low etch bias. An Applied Materials EyeD (TM) spectrometer on the Tetra(TM) II photomask etch system is used to examine several endpoint methods to maximize flexibility and productivity. These methods include: slope changes to a single line, slope changes via a ratio of product and etchant species and slope changes of a linear combination of all slope changes. Endpoint identification is typically performed with a single spectral line. In addition, a method using neural networks, or principal component analysis (PCA) has also been created in order to fully optimize and characterize exact endpoint definition. Comparison between these methods will be discussed.

Paper Details

Date Published: 17 December 2003
PDF: 5 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.519188
Show Author Affiliations
Corey Collard, Etec Systems, Inc., an Applied Materials Co. (United States)
Scott A. Anderson, Etec Systems, Inc., an Applied Materials Co. (United States)
Rex B. Anderson III, Etec Systems, Inc., an Applied Materials Co. (United States)
Jason O. Clevenger, Etec Systems, Inc., an Applied Materials Co. (United States)
Monika Halim, Etec Systems, Inc., an Applied Materials Co. (United States)
Cynthia B. Brooks, Etec Systems, Inc., an Applied Materials Co. (United States)
Melisa J. Buie, Etec Systems, Inc., an Applied Materials Co. (United States)
Turgut Sahin, Etec Systems, Inc., an Applied Materials Co. (United States)


Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

© SPIE. Terms of Use
Back to Top