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Proceedings Paper

Results from a new reticle defect inspection platform
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Paper Abstract

A new DUV high-resolution reticle defect inspection platform has been developed to meet the sub-90nm node 248/193nm lithography reticle qualification requirements of the IC industry. This advanced lithography process typically includes COG layers, EPSM layers, and AltPSM layers; aggressive OPC is typically used which includes jogs, serifs, and SRAF (sub-resolution assist features). The architecture and performance of the new reticle defect inspection platform is described. Die-to-die inspection results on standard programmed defect test reticles are presented showing typically 50nm edge placement defect sensitivity, 80nm point defect sensitivity, 5.5% flux defect sensitivity, and 100nm quartz phase defect sensitivity. Low false detection results are also shown on 90nm node and below product reticles. Direct comparisons with UV wavelength inspections show measurable sensitivity improvement and a reduction in false detections. New lithography oriented defect detectors are discussed and data shown.

Paper Details

Date Published: 17 December 2003
PDF: 15 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003);
Show Author Affiliations
William H. Broadbent, KLA-Tencor Corp. (United States)
James N. Wiley, KLA-Tencor Corp. (United States)
Zain K. Saidin, KLA-Tencor Corp. (United States)
Sterling G. Watson, KLA-Tencor Corp. (United States)
David S. Alles, KLA-Tencor Corp. (United States)
Larry S. Zurbrick, KLA-Tencor Corp. (United States)
Chris A. Mack, KLA-Tencor Corp. (United States)

Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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