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Proceedings Paper

DUV mask writer for BEOL 90-nm technology layers
Author(s): Dongsung Hong; Prakash Krishnan; Dianna Coburn; Nazneen Jeewakhan; Shengqi Xie; Joshua Broussard; Bradley Ferguson; Kent G. Green; Peter Buck; Curt A. Jackson; Larry Martinez
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Paper Abstract

Mask CD resolution and uniformity requirements for back end of line (BEOL) layers for the 90nm Technology Node push the capability of I-line mask writers; yet, do not require the capability offered by more expensive 50KeV ebeam mask writers. This suite of mask layers seems to be a perfect match for the capabilities of the DUV mask writing tools, which offer a lower cost option to the 50KeV platforms. This paper will evaluate both the mask and wafer results from all three platforms of mask writers (50KeV VSB,ETEC Alta 4300TM DUV laser and ETEC Alta 3500TM I-line laser) for a Cypress 90nm node Metal 1 layer, and demonstrate the benefits of the DUV platform with no change to OPC for this layer.

Paper Details

Date Published: 17 December 2003
PDF: 11 pages
Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); doi: 10.1117/12.518051
Show Author Affiliations
Dongsung Hong, Cypress Semiconductor Corp. (United States)
Prakash Krishnan, Cypress Semiconductor Corp. (United States)
Dianna Coburn, Cypress Semiconductor Corp. (United States)
Nazneen Jeewakhan, Cypress Semiconductor Corp. (United States)
Shengqi Xie, Cypress Semiconductor Corp. (United States)
Joshua Broussard, Cypress Semiconductor Corp. (United States)
Bradley Ferguson, Cypress Semiconductor Corp. (United States)
Kent G. Green, DuPont Photomasks, Inc. (United States)
Peter Buck, DuPont Photomasks, Inc. (United States)
Curt A. Jackson, DuPont Photomasks, Inc. (United States)
Larry Martinez, DuPont Photomasks, Inc. (United States)

Published in SPIE Proceedings Vol. 5256:
23rd Annual BACUS Symposium on Photomask Technology
Kurt R. Kimmel; Wolfgang Staud, Editor(s)

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