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Proceedings Paper

InGaN/GaN violet-blue multiple quantum well heterostructure lasers for temperature range of 80-450 K
Author(s): Bernd Schineller; Harry Protzmann; Markus Luenenbuerger; Georg Gerstenbrandt; Michael Heuken; Evgenii V. Lutsenko; Vitaly Z. Zubialevich; Vyacheslav N. Pavlovskii; Alexander L. Gurskii; Gennadii P. Yablonskii
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Paper Abstract

Laser and optical properties of InGaN/GaN multiple quantum well heterostructures were investigated as functions of temperature (T=80-450 K) and excitation intensity (Iexc=10-1100 kW/cm2) of the N2 laser radiation. Laser action was achieved in all types of the MQWs from the violet up to the blue spectral region (λlas=405-470 nm). The laser threshold at room temperature was 35-100 kW/cm2 and 70-150 kW/cm2 for the 'violet' and 'blue' lasers, correspondingly. The characteristic temperature in the temperature range of 80-220 K was T0=180 K for the 'violet' and T0=530 K for the 'blue' lasers. The T0 was lower for all types of lasers at T>250 K. It was shown that the overheating of the active region under high excitation intensities can reach 40-100 K and it is due to inherent laser radiation.

Paper Details

Date Published: 6 October 2003
PDF: 7 pages
Proc. SPIE 5137, International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems, (6 October 2003); doi: 10.1117/12.517991
Show Author Affiliations
Bernd Schineller, AIXTRON AG (Germany)
Harry Protzmann, AIXTRON AG (Germany)
Markus Luenenbuerger, AIXTRON AG (Germany)
Georg Gerstenbrandt, AIXTRON AG (Germany)
Michael Heuken, AIXTRON AG (Germany)
Evgenii V. Lutsenko, B.I. Stepanov Institute of Physics (Belarus)
Vitaly Z. Zubialevich, B.I. Stepanov Institute of Physics (Belarus)
Vyacheslav N. Pavlovskii, B.I. Stepanov Institute of Physics (Belarus)
Alexander L. Gurskii, AIXTRON AG (Germany)
Gennadii P. Yablonskii, AIXTRON AG (Germany)

Published in SPIE Proceedings Vol. 5137:
International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems
Guenter Huber; Ivan A. Scherbakov; Vladislav Ya. Panchenko, Editor(s)

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