Laser and optical properties of InGaN/GaN multiple quantum well heterostructures were investigated as functions of temperature (T=80-450 K) and excitation intensity (I_exc=10-1100 kW/cm²) of the N₂ laser radiation. Laser action was achieved in all types of the MQWs from the violet up to the blue spectral region (λ_las=405-470 nm). The laser threshold at room temperature was 35-100 kW/cm² and 70-150 kW/cm² for the 'violet' and 'blue' lasers, correspondingly. The characteristic temperature in the temperature range of 80-220 K was T₀=180 K for the 'violet' and T₀=530 K for the 'blue' lasers. The T₀ was lower for all types of lasers at T>250 K. It was shown that the overheating of the active region under high excitation intensities can reach 40-100 K and it is due to inherent laser radiation.

Date Published: 6 October 2003
PDF: 7 pages
Proc. SPIE 5137, International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems, (6 October 2003); doi: 10.1117/12.517991

Published in SPIE Proceedings Vol. 5137:
International Conference on Lasers, Applications, and Technologies 2002: Advanced Lasers and Systems
Guenter Huber; Ivan A. Scherbakov; Vladislav Ya. Panchenko, Editor(s)