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Proceedings Paper

Influence of the growth temperature on SiC nanocluster nucleation on Si(111) surface during MBE process
Author(s): Kirill L. Safonov; Dmitri V. Kulikov; Yuri V. Trushin; Joerg Pezoldt
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Paper Abstract

Rate equations approach of computer simulation has been applied to investigate the SiC clusters nucleation and growth on Si surface during molecular beam epitaxy. Cluster surface densities have been obtained for a range of temperatures. The temperature influence on the consequent clusters density, including the surface phase transition (which occurs with simultaneous structure reconstruction), has been determined. The results obtained by the application of the suggested physical model have appeared to be in the reasonable agreement with experimental data.

Paper Details

Date Published: 10 October 2003
PDF: 4 pages
Proc. SPIE 5127, Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (10 October 2003); doi: 10.1117/12.517950
Show Author Affiliations
Kirill L. Safonov, St. Petersburg State Technical Univ. (Russia)
Dmitri V. Kulikov, A.F. Ioffe Physico-Technical Institute (Russia)
Yuri V. Trushin, St. Petersburg State Technical Univ. (Russia)
A.F. Ioffe Physico-Technical Institute (Russia)
Joerg Pezoldt, Technische Univ. Ilmenau (Germany)


Published in SPIE Proceedings Vol. 5127:
Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
Alexander I. Melker, Editor(s)

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