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Proceedings Paper

Hole Zeeman effect in Ge/Si quantum dots
Author(s): A. V. Nenashev; A. Dvurechenskii; A. F. Zinovieva
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Paper Abstract

We investigate theoretically the Zeeman effect on the lowest confined hole in quantum dots. In frame of tight-binding approach we propose a method of calculating the Lande factor for localized states. The principal values of the g-factor for the ground hole state in the self-assembled Ge/Si quantum dot are calculated. We find the strong g-factor anisotropy - the components gxx, gyy are one order smaller than the gzz-component, gzz=15.71, gxx=1.14, gyy=1.76. The efficiency of the developed method is demonstrated by calculating the size-dependence of g-factor and by establishment of the connectin with 2D case. The g-factor anisotropy increases with the island and the ground hole state g-factor goes to heavy hole g-factor. The analysis of the wave function structure shows that g-factor and its size-dependence are mainly controlled by the contribution of the state with Jz=±3/2.

Paper Details

Date Published: 23 July 2003
PDF: 11 pages
Proc. SPIE 5128, First International Symposium on Quantum Informatics, (23 July 2003); doi: 10.1117/12.517895
Show Author Affiliations
A. V. Nenashev, Institute of Semiconductor Physics (Russia)
A. Dvurechenskii, Institute of Semiconductor Physics (Russia)
A. F. Zinovieva, Institute of Semiconductor Physics (Russia)

Published in SPIE Proceedings Vol. 5128:
First International Symposium on Quantum Informatics
Yuri I. Ozhigov, Editor(s)

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