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Proceedings Paper

Influence of ionizing radiation on efficiency of photodiodes on the basis of gallium telluride
Author(s): K. A. Askerov; F. K. Isayev; D. I. Karayev; R. Yu. Aliyev
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Paper Abstract

Influence of the nuclear explosion factors on basic parameters of photodiodes developed on the basis of layered gallium telluride crystals, operating in the spectral range 0.4 ÷ 1.1 μm has been studied. Results of study of the effect pulsing gamma-irradiation and pulsing neutron-irradiation show that photoreceivers on the basis of GaTe crystals is perspective for systems operating in visible and near IR-region.

Paper Details

Date Published: 30 September 2003
PDF: 3 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517415
Show Author Affiliations
K. A. Askerov, Institute of Photoelectronics ANAS (Azerbaijan)
F. K. Isayev, Institute of Photoelectronics ANAS (Azerbaijan)
D. I. Karayev, Institute of Photoelectronics ANAS (Azerbaijan)
R. Yu. Aliyev, Institute of Photoelectronics ANAS (Azerbaijan)

Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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