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Proceedings Paper

Isoperiodical Pb1-xSnxTe(In)/PbTe1-ySey heterojunctions obtained in ultrahigh vacuum
Author(s): Eldar Yu. Salaev; I. R. Nuriev; A. M. Nazarov; S. I. Gadjieva
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Paper Abstract

On super high-vacuum installation (≤3÷5•10-9 mm Hg), in quasi-equilibrium conditions by the method of “hot wall”, in a uniform work cycle, photosensitive izoperiodical heterojunctions (HJ) Pb1-xSnxTe(In)/PbTe1-ySey have been received. Polished plates (100) and quick-spalled sides of BaF2(111) served as substrates. HJ components represent the ideally coordinated pair for the epitaxy in the structural relation. Volt-amper and spectral characteristics of HJ have been registred. The direct branch of VAC at small displacements submits of the exponential law J=J0exp(eU/βκT). At 77 K the coefficient β changes in the interval 1,5÷2, that is characteristic for the generation-recombination mechanism of the current flow through the region of the spatial charge. Maximal photosensitivity is observed at λmax=11,6 micron.

Paper Details

Date Published: 30 September 2003
PDF: 4 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517396
Show Author Affiliations
Eldar Yu. Salaev, Institute of Photoelectronics ANAS (Azerbaijan)
I. R. Nuriev, Institute of Photoelectronics ANAS (Azerbaijan)
A. M. Nazarov, Institute of Photoelectronics ANAS (Azerbaijan)
S. I. Gadjieva, Institute of Photoelectronics ANAS (Azerbaijan)

Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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