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Proceedings Paper

Mechanism for creation of the mercury diffusion source at type conductivity conversion in p-Hg1-xCdxTe under ion-beam milling
Author(s): Victor V. Bogoboyashchiy; Igor I. Izhnin
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Paper Abstract

An analysis of the relaxation process for cation defects in Hg1-xCdxTe that form in the thermal spike at ion-beam milling (IBM) taking into account the neutral mercury bi-vacancies has been performed. It has been enabled to define a correct expression for concentration of the interstitial mercury created at IBM in the mercury diffusion source that is a boundary condition for equations of the diffusion kinetics. Expressions for depth of the p-n conductivity type conversion in both vacancy-doped p-Hg1-xCdxTe and one doped with As, Sb were obtained. There was a good accord between computed dependence of the conversion depth on the ion dose for vacancy-doped Hg1-xCdxTe (x≈0.2) with available literature experimental data. This fact well confirm the model adequacy.

Paper Details

Date Published: 30 September 2003
PDF: 7 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517392
Show Author Affiliations
Victor V. Bogoboyashchiy, Kremenchuk State Polytechnical Univ. (Ukraine)
Igor I. Izhnin, Research and Development Institute for Materials Scientific Research Co. CARAT (Ukraine)

Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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