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Proceedings Paper

Near-contact vary-band layers as a means of suppressing the saturation of amplification in threshold CdHgTe photoconductive devices (photoresistors)
Author(s): Vyacheslav A. Kholodnov; Albina A. Drugova
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Paper Abstract

It is demonstrated in theory that saturation of the photoelectric gain G with increasing voltage V across a sample can be suppressed by introducing a vary-band layer near a current contact toward which the minority charge carries are pulled by the electric field. Inter-band mechanisms of photo-generation and recombination of non-equilibrium carriers are supposed. This is realized, for instance, in CdHeTe-based materials widely used for detecting weak optical radiation in the wavelength intervals of λ=8-12μm and λ=3-5μm.

Paper Details

Date Published: 30 September 2003
PDF: 7 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517359
Show Author Affiliations
Vyacheslav A. Kholodnov, Research, Development, and Production Ctr. ORION (Russia)
Albina A. Drugova, Research, Development, and Production Ctr. ORION (Russia)


Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)

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