Proceedings Paper
Femto-attosecond photoelectronic imaging (the present state of the art and new trends)| Format | Member Price | Non-Member Price |
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Paper Abstract
Basic advantages and limitations of ultrafast photoelectronic imagine are overviewed. Presented are recent experimental results on recording of Ti:sapphire laser radiation with 200-fs time resolution and 30-line pairs/mm spatial resolution. Some peculiarities in displaying of ultrafast optical events onto the photocathode with femtosecond precision are shortly mentioned. Special emphasis is given to creation of ultra high (10-100kV/mm) electrical field strength nearby the photocathode surfaces, as well as to manufacturing various types of femtosecond image converter tubes. To break the femtosecond barrier, a new technique for generation the attosecond bunches of tens keV electrons in quasistationary electromagnetic fields is proposed.
Paper Details
Date Published: 30 September 2003
PDF: 8 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517182
Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)
PDF: 8 pages
Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); doi: 10.1117/12.517182
Show Author Affiliations
Mikhail Ya. Schelev, General Physics Institute RAS (Russia)
Published in SPIE Proceedings Vol. 5126:
17th International Conference on Photoelectronics and Night Vision Devices
Anatoly M. Filachev; Alexander I. Dirochka, Editor(s)
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