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Proceedings Paper

Silicon thermal conductivity detector (TCD) with the Pt resistors
Author(s): Jan M. Lysko; Marianna Gorska; Hanna Wrzesinska; Krzysztof Hejduk; Bogdan Latecki; Joanna Lozinko
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Paper Abstract

Pt resistors formation technology for the thermal conductivity detector (TCD) is presented. Channels for the gas flow were milled in the glass plate and etched in the silicon chip with use of the TMAH+ water solution. Resistors made up of the thin Pt layer, were located across the channels on the silicon chips. They were connected through the contract windows in the Si3N4 and SiO2 layers, with the n+-type regions of the p-type, (100) silicon substrate substrate. BSC-type contacts to the bonding pads allowed electrical contact to the bonding pads located on the opposite side of the silicon substrate. Resistors were electrically tested as a detector heaters and thermoresistors.

Paper Details

Date Published: 22 September 2003
PDF: 4 pages
Proc. SPIE 5124, Optoelectronic and Electronic Sensors V, (22 September 2003); doi: 10.1117/12.517125
Show Author Affiliations
Jan M. Lysko, Institute of Electron Technology (Poland)
Marianna Gorska, Institute of Electron Technology (Poland)
Hanna Wrzesinska, Institute of Electron Technology (Poland)
Krzysztof Hejduk, Institute of Electron Technology (Poland)
Bogdan Latecki, Institute of Electron Technology (Poland)
Joanna Lozinko, Institute of Electron Technology (Poland)

Published in SPIE Proceedings Vol. 5124:
Optoelectronic and Electronic Sensors V
Wlodzimierz Kalita, Editor(s)

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