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Proceedings Paper

In situ investigation of local melting on the silicon surface under irradiation by incoherent light pulses with various durations
Author(s): Tat'yana N. L'vova; Yakh'ya V. Fattakhov; Mansur F. Galyautdinov; M. V. Zakharov; Il'dus B. Khaibullin
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Paper Abstract

To study the main features of local melting more detail in situ investigations of mechanism of this effect were carried out at incoherent light irradiation with different pulse durations and irradiation power densities. These investigations were made using special long-focus microscope and high-speed camera. The results of in situ investigation of the density and sizes of local molten regions on the silicon surface are presented. In this work it was established that for all used light pulse durations the dependences of density of local molten regions on time has a similar character. Three stages are observed: (1) very fast increase from 0 (at the moment of local molten regions nucleation) up to the maximum value; (2) the plateau; (3) decrease due to coalescence of neighboring local molten regions. These results are provided that local molten regions are predominantly created during a relatively short time interval. It also has good agreement with the model of superheating of the semiconductor surface with respect to the equilibrium melting point during the pulse light irradiation.

Paper Details

Date Published: 1 August 2003
PDF: 7 pages
Proc. SPIE 4948, 25th International Congress on High-Speed Photography and Photonics, (1 August 2003); doi: 10.1117/12.516962
Show Author Affiliations
Tat'yana N. L'vova, Kazan Physical-Technical Institute (Russia)
Yakh'ya V. Fattakhov, Kazan Physical-Technical Institute (Russia)
Mansur F. Galyautdinov, Kazan Physical-Technical Institute (Russia)
M. V. Zakharov, Kazan Physical-Technical Institute (Russia)
Il'dus B. Khaibullin, Kazan Physical-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 4948:
25th International Congress on High-Speed Photography and Photonics
Claude Cavailler; Graham P. Haddleton; Manfred Hugenschmidt, Editor(s)

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