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Proceedings Paper

Spectroscopic ellipsometry of TiO2/Si
Author(s): Gintautas J. Babonas; Ahti Niilisk; Alfonsas Reza; Algirdas Matulis; Arnold Rosental
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Paper Abstract

In order to characterize TiO2 films in terms of the overall optical response, spectroscopic ellipsometry studies of the system TiO2/Si were carried out. The films were grown by the atomic-layer chemical vapor deposition on Si(111) substrates. Optical measurements were performed by means of a photometric ellipsometer with rotating analyzer. Experimental results have been analyzed using multilayer and pseudodielectric function approximations.

Paper Details

Date Published: 8 August 2003
PDF: 6 pages
Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); doi: 10.1117/12.515700
Show Author Affiliations
Gintautas J. Babonas, Semiconductor Physics Institute (Lithuania)
Ahti Niilisk, Univ. of Tartu (Estonia)
Alfonsas Reza, Semiconductor Physics Institute (Lithuania)
Algirdas Matulis, Semiconductor Physics Institute (Lithuania)
Arnold Rosental, Univ. of Tartu (Estonia)


Published in SPIE Proceedings Vol. 5122:
Advanced Organic and Inorganic Optical Materials
Andris Krumins; Donats Millers; Inta Muzikante; Andris Sternbergs; Vismants Zauls, Editor(s)

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