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Proceedings Paper

Luminescence of intrinsic defects in LiBaF3
Author(s): A. Pujats; A. Veispals
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Paper Abstract

A wide emission band in the region of 425 nm is observed in all the examined crystals at photo and ionising irradiation. Maximum of the complex luminescence band is observed at 410 nm at 350 K and at 450 nm at 85 K. The shift of the peak of the band envelope towards shorter wavelengths as the temperature increases is related to thermal dependence of the intensity of elementary components of the luminescence band. The authors suggest that the complex luminescence band arises from electronic excitations at "antisite" defects, i.e., defects caused by stoichiometric deviations, when a portion of Li+ cations (cations of one type of the LiBaF3 crystal lattice) occupy sites of Ba2+ cations (cations of another type) and vice versa.

Paper Details

Date Published: 8 August 2003
PDF: 5 pages
Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); doi: 10.1117/12.515696
Show Author Affiliations
A. Pujats, Univ. of Latvia (Latvia)
A. Veispals, Univ. of Latvia (Latvia)

Published in SPIE Proceedings Vol. 5122:
Advanced Organic and Inorganic Optical Materials
Andris Krumins; Donats Millers; Inta Muzikante; Andris Sternbergs; Vismants Zauls, Editor(s)

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