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Proceedings Paper

Mask technologies for deep x-ray LIGA
Author(s): Laurence Singleton; Peter Detemple
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Paper Abstract

Masks for LIGA applications requiring deep X-ray lithography have different specifications compared to those masks used in microelectronic applications. Generally, deep X-ray LIGA applications require resist heights greater than 100 ?m, whereas accurate pattern transfer in this depth of resist is obtained by using highly parallel synchrotron radiation beam from storage rings in the lithography. Given the unusual nature of the lithography, the requirements for the mask blank and the absorber structures are quite different from those used in optical lithography. This paper discusses different approaches to mask making, and weighs up the advantages and disadvantages of the different approaches. In particular, emphasis will be placed on the changes in critical dimensions and sidewall roughnesses in the resist structures produced by the different mask technologies.

Paper Details

Date Published: 28 May 2003
PDF: 8 pages
Proc. SPIE 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (28 May 2003); doi: 10.1117/12.515144
Show Author Affiliations
Laurence Singleton, Institut fuer Mikrotechnik Mainz GmbH (Germany)
Peter Detemple, Institut fuer Mikrotechnik Mainz GmbH (Germany)

Published in SPIE Proceedings Vol. 5148:
19th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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