Electron Projection Lithography ( EPL) is a leading candidate for the sub-65 nm lithography regime (1),(2). The development of a low-distortion mask is critical to the success of EPL. EPL has traditionally used either a stencil format mask with a single scatterer layer having the pattern represented by voids in the membrane (3), or a continuous membrane format mask with a patterned scatterer layer supported by an unperforated membrane(4).

Date Published: 28 May 2003
PDF: 2 pages
Proc. SPIE 5148, 19th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (28 May 2003); doi: 10.1117/12.515090

Published in SPIE Proceedings Vol. 5148:
19th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)