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Proceedings Paper

Tunnelling of photogenerated holes through landau levels in GaAs/AlGaAs double barrier diodes
Author(s): Andres Vercik; M. J.S.P. Brasil; Y. G. Gobato; G. E. Marques
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Paper Abstract

The experimental observation of Landau levels due to the quantization of the transverse moment of holes in resonant tunneling diodes is reported in this work. At very low bias, the photocurrent versus voltage curves, measured under a magnetic field perpendicular to the barrier planes, exhibited several peaks associated to this phenomenon. The analysis of the peak position as a function of the magnetic field reveals several interesting features as non-parabolicity of the valence band, diamagnetic behavior and repulsion between levels with the same Landau-level index.

Paper Details

Date Published: 11 June 2003
PDF: 3 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514620
Show Author Affiliations
Andres Vercik, Univ. Federal de Sao Carlos (Brazil)
M. J.S.P. Brasil, Univ. de Campinas (Brazil)
Y. G. Gobato, Univ. Federal de Sao Carlos and Univ. de Campinas (Brazil)
G. E. Marques, Univ. Federal de Sao Carlos (Brazil)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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