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Proceedings Paper

Resonant tunneling metal-oxide-silicon nanostructure
Author(s): Galina G. Kareva; M. I. Vexler; I. Grekhov; A. F. Shulekin
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Paper Abstract

Some evidences for an ability of a metal-oxide-silicon (MOS) structure, widely used in the current integrated circuit electronics, to operate as a resonant tunneling diode are discussed. The energy band diagram of the MOS structure based on a highly doped p-Si (NA in the range of 1018 - 1020 cm-3) with an oxide thickness in the tunnel transparent range of 1 - 4 nm in reverse bias presents an asymmetrical double barrier with a quantum well of variable depth. Both the calculated and measured current-voltage characteristics of such nanostructures exhibit resonant tunneling features, such as steps and peaks, attesting electron resonant tunneling transport. The nanostructures have their origin in design, materials and technologies within the current integrated electronics so that they can be easily combined with its elements on one chip.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514615
Show Author Affiliations
Galina G. Kareva, St. Petersburg State Univ. (Russia)
M. I. Vexler, St. Petersburg State Univ. (Russia)
I. Grekhov, A.F. Ioffe Physico-Technical Institute (Russia)
A. F. Shulekin, St. Petersburg State Univ. (Russia)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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