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Proceedings Paper

Ferromagnetic GaMnAs for spintronic devices
Author(s): Achim Koeder; W. Schoch; S. Frank; R. Kling; M. Oettinger; V. Avrutin; W. Limmer; Rolf Sauer; Andreas Waag
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Paper Abstract

Ferromagnetic Ga1-xMnxAs films containing up to 5.1 at%Mn were grown by low-temperature MBE. The structural, electrical, and magnetic properties of the layers are reported. At x > 0.01, the materials show a ferromagnetic behavior. The Curie temperature reaches 80 K at 5.1at% Mn. We propose the use of a n+-GaAs/p+-GaMnAs Esaki-diode (ferromagnetic Esaki-diode, FED) to provide injection of spin-polarized electrons via interband tunneling. Under reverse bias, spin-polarized electrons at the Fermi level in the valence band of GaMnAs tunnel to the conduction band of GaAs in contrast to the injection of spin-polarized holes used before.

Paper Details

Date Published: 11 June 2003
PDF: 3 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514534
Show Author Affiliations
Achim Koeder, Univ. Ulm (Germany)
W. Schoch, Univ. Ulm (United States)
S. Frank, Univ. Ulm (United States)
R. Kling, Univ. Ulm (United States)
M. Oettinger, Univ. Ulm (United States)
V. Avrutin, Univ. Ulm (United States)
W. Limmer, Univ. Ulm (United States)
Rolf Sauer, Univ. Ulm (Germany)
Andreas Waag, Univ. Ulm (Germany)


Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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