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Proceedings Paper

Gateable spin memory in InP quantum dots
Author(s): I. A. Yugova; I. V. Ignatiev; S. Yu. Verbin; I. Ya Gerlovin; V. K. Kalevich; A. Yu Shiryaev; Kirill V. Kavokin; Yasuaki Masumoto
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Paper Abstract

In photoluminescence kinetics of the InP quantum dots, we have found a long-lived component of the degree of circular polarization, showing practically no decay during the lifetime of excitation. It is shown that this effect is observed only in the charged quantum dots. The amplitude of the long-lived PL polarization can be controlled by an applied electric field and may be as high as 50% in the case of quasi resonance excitation. The existence of the long-lived component of the polarization is the clear evidence of large lifetime of the electron spin polarization in quantum dots.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514458
Show Author Affiliations
I. A. Yugova, St. Petersburg State Univ. (Russia)
I. V. Ignatiev, St. Petersburg State Univ. and Univ. of Tsukuba (Russia)
S. Yu. Verbin, St. Petersburg State Univ. (Russia)
I. Ya Gerlovin, Vavilov State Optical Institute (Russia)
V. K. Kalevich, Univ. of Tsukuba and A.F. Ioffe Physico-Technical Institute (Russia)
A. Yu Shiryaev, A.F. Ioffe Physico-Technical Institute (Russia)
Kirill V. Kavokin, A.F. Ioffe Physico-Technical Institute (Russia)
Yasuaki Masumoto, Univ. of Tsukuba (Japan)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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