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Proceedings Paper

Terahertz emitting devices based on intersubband transitions in SiGe quantum wells
Author(s): T. N. Adam; R. T. Troeger; S. K. Ray; U. Lehmann; James Kolodzey
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Paper Abstract

Terahertz electroluminescence was produced by intersubband transitions in silicongermanium quantum wells. The devices were grown by solid-source molecular-beam epitaxy on high-resistivity silicon substrates, and were fabricated by standard photolithography and processing techniques. Using FTIR spectroscopy at at temperature of 5 K, electroluminescence was observed around 9 THz. The emission was attributed to heavy-hole-to-light-hole transitions and demonstrates the potential for SiGe technology as terahertz emitters.

Paper Details

Date Published: 11 June 2003
PDF: 3 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514391
Show Author Affiliations
T. N. Adam, Univ. of Delaware (United States)
R. T. Troeger, Univ. of Delaware (United States)
S. K. Ray, Univ. of Delaware (United States)
U. Lehmann, Univ. of Delaware (United States)
James Kolodzey, Univ. of Delaware (United States)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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