Share Email Print

Proceedings Paper

Use of nanostructure-cluster-based ion-implantation-induced saturable absorbers in multisection high-power 1.5um picosecond laser diodes
Author(s): G. B. Venus; A. Gubenko; Efim L. Portnoi; Eugene A. Avrutin; Jan-Michael Frahm; J. Kubler; S. Schelhase
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We report short (30 - 35 ps), high energy (more than 100 pJ) optical pulses at 1.5 μm from Q-swithced laser diodes with multisection implantation-induced saturable absorbers. Dramatic improvement in pulse parameters over tandem lasers is due to suppression of spatial hole-burning and amplified spontaneous emission.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.514375
Show Author Affiliations
G. B. Venus, A.F. Ioffe Physico-Technical Institute (Russia)
A. Gubenko, A.F. Ioffe Physico-Technical Institute (Russia)
Efim L. Portnoi, A.F. Ioffe Physico-Technical Institute (Russia)
Eugene A. Avrutin, Univ. of York (United Kingdom)
Jan-Michael Frahm, Advanced Photonic Systems GmbH (Germany)
J. Kubler, Advanced Photonic Systems GmbH (Germany)
S. Schelhase, Advanced Photonic Systems GmbH (Germany)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?