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Proceedings Paper

Design and fabrication of InAsSb detectors
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Paper Abstract

A study of the optimisation of the detectivity of a mid infrared double heterostructures photovoltaic detector is proposed. Simple approximate analytic expressions for the dark current are compared with full numerical calculations, and give physical insight on the mechanisms dominating the dark current. The analysis is performed step by step in different structures, from a simple p-n junction to the full double heterostructures. The influence of temperature, barrier band gap energy and absorbing layer thickness in a double heterostructures, doping density in the active region on diffusion and generation-recombination mechanisms is analysed.

Paper Details

Date Published: 19 February 2004
PDF: 11 pages
Proc. SPIE 5251, Detectors and Associated Signal Processing, (19 February 2004); doi: 10.1117/12.514204
Show Author Affiliations
Mathieu Carras, Thales Research and Technology (France) and Univ. Denis Diderot, CNRS (France)
Univ. Denis Diderot (France)
Gabrielle Marre, Thales Research and Technology (France)
Borge Vinter, Thales Research and Technology (France)
Jean Luc Reverchon, Thales Research and Technology (France)
Vincent Berger, Thales Research and Technology (France) and Univ. Denis Diderot, CNRS (France)
Univ. Denis Diderot (France)

Published in SPIE Proceedings Vol. 5251:
Detectors and Associated Signal Processing
Jean-Pierre Chatard; Peter N. J. Dennis, Editor(s)

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