For memory structures based on optically induced charge in self-organized quantum dots, the concept of wavelength-domain multiplexing in the quantum dot ensemble is an essential prerequisite. The electric properties of quantum dots in various material systems as studied by time-resolved capacitance spectroscopy are summarized, and candidates suitable for future memory applications are discussed. By combining optical excitation and capacitance spectroscopy, direct evidence is obtained for energy-selective hole charge generation and storage in InAs/GaAs quantum dots. A clear dependence of the activation energy of the emitted holes on the energy of the excitation is observed.

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.513858

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)