Share Email Print

Proceedings Paper

Variations in a design for a nanoscale silicon laser
Author(s): Supriya L. Jaiswal; Pamela M. Norris
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In the design of optoelectronic devices, size and compatibility with current technology are two significant considerations. A much desired optoelectronic laser design would be one in which the laser formed a very small integrated component of a silicon microchip and was fabricated entirely from CMOS compatible materials. Until recently, the prospect for such a device seemed unlikely, and the future of optoelectronic functionality appeared to lie largely with direct bandgap semiconductors such as GaAs. However, the recent observation of optical gain in silicon nanocrystals has opened an opportunity to develop a nanoscale silicon-based laser. In this paper we report on various designs that could be used to achieve such a breakthrough. The designs are based on photonic crystal architecture and utilize Si nanocrystals embedded in SiO2 for the lasing media. The designs could be employed for other nanolasers providing specific lasing criteria are met.

Paper Details

Date Published: 10 November 2003
PDF: 8 pages
Proc. SPIE 5191, Optical Diagnostics for Fluids, Solids, and Combustion II, (10 November 2003); doi: 10.1117/12.513427
Show Author Affiliations
Supriya L. Jaiswal, University of Virginia (United States)
Pamela M. Norris, University of Virginia (United States)

Published in SPIE Proceedings Vol. 5191:
Optical Diagnostics for Fluids, Solids, and Combustion II
Patrick V. Farrell; Fu-Pen Chiang; Carolyn R. Mercer; Gongxin Shen, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?