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Proceedings Paper

Photothermal facility for optical characterization of DUV materials
Author(s): Laurent Gallais; Hauke Hinsch; Man-Long Lay; Mireille Commandre
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Paper Abstract

A photothermal facility implemented for optical characterization at 244nm is presented. This apparatus allows simultaneous absorption, partial scattering and fluorescence mappings of substrates and thin films, using a collinear photothermal deflection technique. A CW 100mW - 244 nm pump laser beam is used, focused with 20 to 5 microns diameter. The technical data, calibration procedure as well as performances in terms of spatial resolution, detectivity and sensitivity are described in this paper. Then we give an application example with the case of an extrinsic absorbing/scattering/fluorescent defect on fused silica.

Paper Details

Date Published: 25 February 2004
PDF: 6 pages
Proc. SPIE 5250, Advances in Optical Thin Films, (25 February 2004); doi: 10.1117/12.513405
Show Author Affiliations
Laurent Gallais, Institut Fresnel, CNRS-ENSPM (France)
Hauke Hinsch, Institut Fresnel, CNRS-ENSPM (France)
Man-Long Lay, Institut Fresnel, CNRS-ENSPM (France)
Mireille Commandre, Institut Fresnel, CNRS-ENSPM (France)

Published in SPIE Proceedings Vol. 5250:
Advances in Optical Thin Films
Claude Amra; Norbert Kaiser; H. Angus Macleod, Editor(s)

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