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Proceedings Paper

Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs
Author(s): Manijeh Razeghi; Yajun Wei; Junjik Bae; Aaron Gin; Andrew Hood; Jutao Jiang; Jongbum Nah
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Paper Abstract

The authors report the most recent progress in Type II InAs/GaSb superlattice materials and photovoltaic detectors developed for focal plane array applications with a cutoff wavelength of ~8 μm. No turn-on of tunneling current was observed even at a reverse bias of -3 V for a 3 μm thick p-i-n photodiodes. The thermally-limited zero bias detectivity under 300 K 2 π FOV was 2~3×1011 cm•Hz1/2/W at liquid nitrogen temperature, with a current responsivity of 2~3 A/W and a mean quantum efficiency of ~50%. Initial passivation using SiO2 has shown to decrease the dark current by ~30% at a reverse bias of -1 V. The same detector structure was used for focal plane arrays with silicon readout integrated circuit. Concept proof of imaging was demonstrated with a format of 256×256 at liquid nitrogen temperature.

Paper Details

Date Published: 14 August 2003
PDF: 11 pages
Proc. SPIE 5246, Active and Passive Optical Components for WDM Communications III, (14 August 2003); doi: 10.1117/12.512556
Show Author Affiliations
Manijeh Razeghi, Northwestern Univ. (United States)
Yajun Wei, Northwestern Univ. (United States)
Junjik Bae, Northwestern Univ. (United States)
Aaron Gin, Northwestern Univ. (United States)
Andrew Hood, Northwestern Univ. (United States)
Jutao Jiang, Northwestern Univ. (United States)
Jongbum Nah, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 5246:
Active and Passive Optical Components for WDM Communications III
Achyut K. Dutta; Abdul Ahad S. Awwal; Niloy K. Dutta; Kazuo Fujiura, Editor(s)

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