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Proceedings Paper

Tungsten/boron nitride multilayers for XUV optical applications
Author(s): Pierre Boher; Louis Hennet; F. Pierre; David J. Smith; Abhijit Uday Modak; M. Idir; Robert J. Barchewitz
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Paper Abstract

W/BN multilayers are theoretically efficient x-ray mirrors at the nitrogen and boron K-(alpha) lines (31.3 angstroms and 67.6 angstroms, respectively). Their most attractive potential application is detection of light elements by x-ray fluorescence spectrometry. The performances of W/BN mirrors depend not only on the structural quality of the multilayers but also on the stoichiometry of the boron nitride layers, especially in the water window (20 - 40 angstroms). In order to get stoichiometric BN layers with low surface roughness, the deposition of thick boron nitride films has been studied in detail. In-situ kinetic ellipsometry, x-ray photoemission, grazing x-ray reflection and scanning electron microscopy show that quasi-stoichiometric BN films with low surface roughness are obtained only with a low total deposition pressure and an additional nitrogen partial pressure. This result is related to the chemical and structural properties of the BN films. W/BN multilayers with medium period value (2d approximately equals 120 angstroms) show about 80 of the maximum reflectivity at the W M4-5 line. When the period is reduced, the performances are reduced, but good quality W/BN multilayers with very low period values (2d approximately equals 50 angstroms) and a great number of periods ( 100) have been fabricated. The best structural quality is obtained when a low nitrogen partial pressure is introduced during the deposition of the BN layers. The optical indice contrast is improved and the tungsten-boron interdiffusion is reduced.

Paper Details

Date Published: 1 January 1992
PDF: 17 pages
Proc. SPIE 1546, Multilayer and Grazing Incidence X-Ray/EUV Optics, (1 January 1992); doi: 10.1117/12.51212
Show Author Affiliations
Pierre Boher, Labs. d'Electronique Philips (France)
Louis Hennet, Labs. d'Electronique Philips (France)
F. Pierre, Labs. d'Electronique Philips (France)
David J. Smith, Arizona State Univ. (United States)
Abhijit Uday Modak, Arizona State Univ. (United States)
M. Idir, Lab. de Chimie Physique/Univ. Paris VI and LURE/Univ. Paris (France)
Robert J. Barchewitz, Lab. de Chimie Physique/Univ. Paris VI and LURE/Univ. Paris (France)

Published in SPIE Proceedings Vol. 1546:
Multilayer and Grazing Incidence X-Ray/EUV Optics
Richard B. Hoover, Editor(s)

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