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Proceedings Paper

Improvement of conductivity and breakdown cteristics of AlGaN/GaN HEMT structures in passivation experiments
Author(s): S. Shapoval; V. Gurtovoi; A. Kovalchuk; Lester Fuess Eastman; A. Vertjachih; Christophe Gaquiere; David Theron
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Paper Abstract

We have studied interface properties of Si3N4/GaN structures by capacitance-voltage methods, paying attention to semiconductor surface treatments before insulator deposition. ECR plasma deposition of Si3N4 and ECR plasma treatments of semiconductor surfaces have been used. The interface state density depends on the hydrogen incorporation in ECR silicon nitride and its composition, which are the function of ECR deposition parameters. Optical properties and H-content of the films were characterized by ellipsometry and Fourier transform infrared (FTIR) spectroscopy, respectively. Minimum interface state density (1x1011 cm-2 eV-1) has been observed for optimized composition Si3N4 films and ECR O2 and CF4 plasma treatment of GaN. After passivation by optimized Si3N4 films, there were observed improvement in breakdown voltage, increase in saturation current, output power, and power added efficiency for AlGaN/GaN HEMTs.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.511539
Show Author Affiliations
S. Shapoval, Institute of Microelectronics Technology (Russia)
V. Gurtovoi, Institute of Microelectronics Technology (Russia)
A. Kovalchuk, Institute of Microelectronics Technology (Russia)
Lester Fuess Eastman, Cornell Univ. (United States)
A. Vertjachih, Cornell Univ. (United States)
Christophe Gaquiere, Institut d'Electronique et de Microelectronique du Nord-CNRS (France)
David Theron, Institut d'Electronique et de Microelectronique du Nord-CNRS (France)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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