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Proceedings Paper

Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures
Author(s): Bo Monemar; Plamen P. Paskov; H. Haratizadeh; Galina R. Pozina; J. P. Bergman; Satoshi Kamiyama; Motoaki Iwaya; Hiroshi Amano; Isamu Akasaki
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Paper Abstract

We report on low temperature photoluminescence (PL) in InxGa1-xN multiple qunatum wells (MQWs) with x in the range 0.1 and highly Si doped barriers of In0.01Ga0.99N. One sample with 3 QWs of width 3.5 nm and barriers of width 10.5 nm had the MQW in the depletion region of the outer surface. Two PL peaks were observed, one QW exciton from the QW closest to the GaN buffer, one lower energy peak related to a 2DEG at the interface to the GaN buffer layer. In a second similar sample 5 QWs of width 3 nm and with 6 nm highly Si doped In0.01Ga0.99N barriers the MQW was placed in the n-side depletion region of a pn-junction. At low temperatures the PL and electroluminescence (EL) spectra are quite different at no, low, or reverse bias, the PL appearing at higher energy. At high forward bias a spectral component at the EL position appears. This proves a strong influence of the depletion field on the optical spectra. Preliminary results are also reported for n-doped Al0.07Ga0.93N/GaN structures, with near surface MQWs.

Paper Details

Date Published: 11 June 2003
PDF: 5 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.511285
Show Author Affiliations
Bo Monemar, Linkoeping Univ. (Sweden)
Plamen P. Paskov, Linkoeping Univ. (Sweden)
H. Haratizadeh, Linkoeping Univ. (Sweden)
Galina R. Pozina, Linkoeping Univ. (Sweden)
J. P. Bergman, Linkoeping Univ. (Sweden)
Satoshi Kamiyama, Meijo Univ. (Japan)
Motoaki Iwaya, Meijo Univ. (Japan)
Hiroshi Amano, Meijo Univ. (Japan)
Isamu Akasaki, Meijo Univ. (Japan)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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