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Proceedings Paper

Formation specifity of InAs/GaAs submonolayer superlattice
Author(s): Ilja P. Soshnikov; Boris V. Volovik; Alexey R. Kovsh; Alexey E. Zhukov; Anrei F. Tsatsul'nikov; O. M. Gorbenko; N. N. Ledentsov; Victor M. Ustinov; P. Werner; N. D. Zakharov; D. Gerthsen
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Paper Abstract

Heterostructures with submonolayer insertions attract interest due to optical properties and to possibility of the studying of the self-organization effect. Besides, investigation of SML heterostructures is retarded as consequence of problems of the structural and composition characterization. The situation is changed on account of development of quantitative methods for HREM image analysis. There formation of superlattice heterostructures with InAs submonolayer insertions in GaAs matrix and them optical properties are investigated in the work.

Paper Details

Date Published: 11 June 2003
PDF: 3 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.511275
Show Author Affiliations
Ilja P. Soshnikov, A.F. Ioffe Physico-Technical Institute (Russia)
Boris V. Volovik, A.F. Ioffe Physico-Technical Institute (Russia)
Alexey R. Kovsh, A.F. Ioffe Physico-Technical Institute (Russia)
Alexey E. Zhukov, A.F. Ioffe Physico-Technical Institute (Russia)
Anrei F. Tsatsul'nikov, A.F. Ioffe Physico-Technical Institute (Russia)
O. M. Gorbenko, A.F. Ioffe Physico-Technical Institute (Russia)
N. N. Ledentsov, A.F. Ioffe Physico-Technical Institute (Russia)
Victor M. Ustinov, A.F. Ioffe Physico-Technical Institute (Russia)
P. Werner, Max-Planck-Institut fuer Mikrostrukturphysik (Germany)
N. D. Zakharov, Univ. Karlsruhe (Germany)
D. Gerthsen, Univ. Karlsruhe (Germany)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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