Share Email Print

Proceedings Paper

Properties of shallow electron trap dopants in AgCl optical storage materials
Author(s): Aicong Geng; Xiao-Wei Li; Shaopeng Yang; Guoyi Dong; Guangsheng Fu
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Using a computer simulation, AgCl emulsions doped with [Fe(CN)6]4- complexes and a reference AgCl emulsion without dopants have been investigated at room temperature, and the free photoelectron decay time (FPT) was obtained. According to compare with the experimental results obtained by microwave absorption dielectric spectrum detection technology, the shallow electron traps (SETs) information was gotten. In this simulation, a model, which consists of a [Fe(CN)6]4- related SETs and intrinsic centers including two types of electron traps and a recombination center, is proposed. The model results in a set of differential equations that describe the kinetics of photographic generation, trapping, thermal detrapping and recombination processes. The FPT was simulated through solving these differential equations. Adjusting the simulation parameters of SETs to fit the experimental data, a number of important conclusions about SETs dopants were drawn from the simulation study.

Paper Details

Date Published: 9 April 2003
PDF: 4 pages
Proc. SPIE 5060, Sixth International Symposium on Optical Storage (ISOS 2002), (9 April 2003); doi: 10.1117/12.510542
Show Author Affiliations
Aicong Geng, Hebei Univ. (China)
Xiao-Wei Li, Hebei Univ. (China)
Shaopeng Yang, Hebei Univ. (China)
Guoyi Dong, Hebei Univ. (China)
Guangsheng Fu, Hebei Univ. (China)

Published in SPIE Proceedings Vol. 5060:
Sixth International Symposium on Optical Storage (ISOS 2002)
Fuxi Gan; Zuoyi Li, Editor(s)

© SPIE. Terms of Use
Back to Top