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Proceedings Paper

Room-temperature electroluminescence at 1.55 um from InAs quantum dots grown on (001) InP by droplet hetero-epitaxy
Author(s): R. Oga; W. S. Lee; Y. Fujiwara; Y. Takeda
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Paper Abstract

We have successfully observed room-temperature electroluminescence (EL) from InAs quantum dots (QDs) on (001) InP substrates. The InAs QDs were grown by droplet hetero-epitaxy using low-pressure organometallic vapor epitaxy (OMVPE). There were two kinds of InAs QDs; large and small QDs. The small InAs QDs with the average diameter and height of 40 nm and 7 nm were present at the density of 3 x 1010 cm-2. In photoluminescence (PL) measurements at 77 K, a peak with full width of 84 meV at half maximum was observed around at 1506 nm. Room-temperature electroluminescence was successfully observed from InAs QDs embedded in InP matrix around at 1560 nm, together with InP emission at 980 nm. With increasing injection current density from 3 A/cm-2 to 33 A/cm-2, the shape of the spectra was unchanged, suggesting that the broadness of the luminescence is due to the size distribution of InAs QDs.

Paper Details

Date Published: 11 June 2003
PDF: 4 pages
Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); doi: 10.1117/12.510424
Show Author Affiliations
R. Oga, Nagoya Univ. (Japan)
W. S. Lee, Nagoya Univ. (Japan)
Y. Fujiwara, Nagoya Univ. (Japan)
Y. Takeda, Nagoya Univ. (Japan)

Published in SPIE Proceedings Vol. 5023:
10th International Symposium on Nanostructures: Physics and Technology
Zhores I. Alferov; Leo Esaki, Editor(s)

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