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Proceedings Paper

Selective low-temperature chemical vapor deposition of copper from new copper(I) compounds
Author(s): Ajay Jain; H. K. Shin; Kai-Ming Chi; Mark J. Hampden-Smith; Toivo T. Kodas; Janos Farkas; M. T. Paffett; J. D. Farr
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Paper Abstract

Chemical vapor deposition of copper, in hot- and warm-wall reactors from a variety of copper(I)compounds of general formula XCuLn where X = (3-diketonate and 13-ketoiminate and L = phosphine, olefin and alkyne, has been investigated. All compounds deposit high-purity copper, as determined by Auger electron spectroscopy, over the temperature range 100-400°C and pressure range 10 - 150mtorr, with resistivities in the range 1.8 - 5.1 µohmcm. Selective deposition has been studied as a function of theneutral Lewis base ligand, L. The (R-diketonate)Cu(phosphine) compounds have been show to deposit copper selectively onto Pt, W and Cu in the presence of Si02. The temperature range over which selectivity was observed was a function of the substituents on the 13-diketonate ligand. The ([3- diketonate)Cu(1,5-cyclooctadiene) and ([3-diketonate)Cu(alkyne) compounds studied to date did notexhibit selectivity for the above metal substrates over Si02. Deposition rates of up to 9,000Å/min at 200°C have been obtained in a cold-wall CVD reactor under surface reaction limited conditions. Activation energy parameters were measured from the temperature variation of the deposition rate were in the range 21 - 26kcal/mol for (hfac)Cu(PMe3), (hfac)Cu(1,5-cyclooctadiene) and (hfac)Cu(2-butyne). All three classes of compounds undergo a thermally induced disproportionation according to the general reaction shown below.

Paper Details

Date Published: 1 December 1991
PDF: 11 pages
Proc. SPIE 1596, Metallization: Performance and Reliability Issues for VLSI and ULSI, (1 December 1991); doi: 10.1117/12.51008
Show Author Affiliations
Ajay Jain, Univ. of New Mexico (United States)
H. K. Shin, Univ. of New Mexico (United States)
Kai-Ming Chi, Univ. of New Mexico (United States)
Mark J. Hampden-Smith, Univ. of New Mexico (United States)
Toivo T. Kodas, Univ. of New Mexico (United States)
Janos Farkas, Univ. of New Mexico (United States)
M. T. Paffett, Los Alamos National Lab. (United States)
J. D. Farr, Los Alamos National Lab. (United States)

Published in SPIE Proceedings Vol. 1596:
Metallization: Performance and Reliability Issues for VLSI and ULSI
Gennady Sh. Gildenblat; Gary P. Schwartz, Editor(s)

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