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Proceedings Paper

Indium tin oxide single-mode waveguide modulator
Author(s): Ray T. Chen; Daniel P. Robinson; Huey T. Lu; Lev S. Sadovnik; Winston Ho
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Paper Abstract

We have successfully demonstrated an In203:Sn semiconductor thin film waveguide. The energy gap of the film can be manipulated from 3.1 eV (0.4 pm) to 3.7 eV (0.335 mm) by changing the ratio of In203 and Sn02. Waveguide propagation losses of 3 dB/cm for transverse magnetic (TM) and 8 dB/cm for transverse electric (TE) guided waves were experimentally confirmed at the wavelength of 632.8 mm. A phase modulator containing an indium tin oxide waveguide, two holographic mirrors, two microprisms, and two ohmic contacts was fabricated. Electro-optic (current injection) and all optical modulations were conducted. A modulation depth of 18% was experimentally confirmed for the current injection device, using 15-volt applied voltage, and a modulation depth of 15% using 250 mW 355 nm UV light as the activation sources. An In203:Sn waveguide device working at the cutoff boundary was made. A modulation depth of 26 dB was measured with an applied voltage of 30 volts. An array of applications, including use in current sensors, ozone UV sensors, attenuated total reflection (ATR) modulators, delay lines for phased array antennae and multi-quantum wells are highly feasible.

Paper Details

Date Published: 1 December 1991
PDF: 13 pages
Proc. SPIE 1583, Integrated Optical Circuits, (1 December 1991); doi: 10.1117/12.50906
Show Author Affiliations
Ray T. Chen, Physical Optics Corp. (United States)
Daniel P. Robinson, Physical Optics Corp. (United States)
Huey T. Lu, Physical Optics Corp. (United States)
Lev S. Sadovnik, Physical Optics Corp. (United States)
Winston Ho, Physical Optics Corp. (United States)

Published in SPIE Proceedings Vol. 1583:
Integrated Optical Circuits
Ka Kha Wong, Editor(s)

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