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Proceedings Paper

Smart masks for next-generation lithography
Author(s): Dryver R. Huston; Wolfgang Sautera
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Paper Abstract

Next generation lithograph tools, such as x-ray, ion or electron beam use thin film membrane windows for the exposure masks. Systematic aberrations due to heat distortions during exposure and other influences are inevitable. The possibility of integrating an active correction system by mechanical stretching with precision actuators is investigated. The basic idea is to measure the placement error of the mask at a finite number of precision points and use these errors measurements to stretch the membrane with in-plane actuators back to their proper locations. The actuation could be implemented by micro-actuators that are monolithically attached directly to the mask membrane. In order to implement such a system, the following are required: 1) A metrology system that precisly measures the displacement of a set of precision points; 2) Micro-actuators that can be directly attached to the mask and offer sufficient force and displacement to strain the mask; and 3) A control algorithm and system that correlates 1 with 2.

Paper Details

Date Published: 13 March 2003
PDF: 6 pages
Proc. SPIE 4763, European Workshop on Smart Structures in Engineering and Technology, (13 March 2003); doi: 10.1117/12.508736
Show Author Affiliations
Dryver R. Huston, Univ. of Vermont (United States)
Wolfgang Sautera, Univ. of Vermont (United States)
IBM Microelectronics (United States)


Published in SPIE Proceedings Vol. 4763:
European Workshop on Smart Structures in Engineering and Technology
Brian Culshaw, Editor(s)

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