Proceedings Paper
High-sensitivity photorefractivity in bulk and multiple-quantum-well semiconductors| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
Band-edge photorefractive effect provides large sensitivities and nonlinearities in bulk and multiple quantum well semiconductors. Recent results in InP:Fe and a novel photorefractive device based on the quantum confined stark effect in semi-insulating II-VI multiple quantum wells are reported.
Paper Details
Date Published: 1 December 1991
PDF: 13 pages
Proc. SPIE 1561, Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion, (1 December 1991); doi: 10.1117/12.50750
Published in SPIE Proceedings Vol. 1561:
Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion
Peter F. Bordui, Editor(s)
PDF: 13 pages
Proc. SPIE 1561, Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion, (1 December 1991); doi: 10.1117/12.50750
Show Author Affiliations
Afshin Partovi, AT&T Bell Labs. (United States)
Alastair M. Glass, AT&T Bell Labs. (United States)
Alastair M. Glass, AT&T Bell Labs. (United States)
Robert D. Feldman, AT&T Bell Labs. (United States)
Published in SPIE Proceedings Vol. 1561:
Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion
Peter F. Bordui, Editor(s)
© SPIE. Terms of Use
