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Proceedings Paper

High-sensitivity photorefractivity in bulk and multiple-quantum-well semiconductors
Author(s): Afshin Partovi; Alastair M. Glass; Robert D. Feldman
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Paper Abstract

Band-edge photorefractive effect provides large sensitivities and nonlinearities in bulk and multiple quantum well semiconductors. Recent results in InP:Fe and a novel photorefractive device based on the quantum confined stark effect in semi-insulating II-VI multiple quantum wells are reported.

Paper Details

Date Published: 1 December 1991
PDF: 13 pages
Proc. SPIE 1561, Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion, (1 December 1991); doi: 10.1117/12.50750
Show Author Affiliations
Afshin Partovi, AT&T Bell Labs. (United States)
Alastair M. Glass, AT&T Bell Labs. (United States)
Robert D. Feldman, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1561:
Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion
Peter F. Bordui, Editor(s)

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