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Proceedings Paper

High-speed alumina nanotemplate fabrication on silicon substrate
Author(s): Nosang V. Myung; James Lim; Jean-Pierre Fleurial; Minhee Yun; William West; Daniel Choi
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Paper Abstract

Alumina nanotemplates integrated on silicon substrate with pore diameters of 12 nm to 100 nm were prepared by galvanostatic anodization. High current density (e.g. 100 promoted a highly ordered hexagonal pore structure with fast formation rate independent of anodizing solutions, where 2000 nm/min, 1000 nm/min were achieved at current densities of 100 and 50, respectively. These rates were approximately two orders of magnitude greater than other reports in the literature. Different electrolytes of sulfuric acid (1.8 to 7.2 M), oxalic acid (0.3 M) and mixed solutions of sulfuric and oxalic acid were evaluated as anodizing solutions. Sulfuric acid promoted smaller pore diameter with lower porosity than mixed acids and oxalic acid. The I-V characteristics strongly depend on solution composition, temperature, and bath agitation. In the case of sulfuric acid, the breakdown voltage (UB) varied linearly with logarithmic of sulfuric acid concentration (UB = 24.5-11 log [H2SO4]) and it decreased at higher temperature. The pore diameter of silicon-integrated alumina nanotemplate varied linearly with measured voltage with a slope of 2.1 nm/V, which is slightly smaller than reported data on bulk aluminum (2.2 nm/V and 2.77 nm/V). Thermoelectric Bi2Te3 nanowires with diameter of 43 nm were electrodeposited.

Paper Details

Date Published: 27 October 2003
PDF: 8 pages
Proc. SPIE 5219, Nanotubes and Nanowires, (27 October 2003); doi: 10.1117/12.507204
Show Author Affiliations
Nosang V. Myung, Jet Propulsion Lab. (United States)
James Lim, Jet Propulsion Lab. (United States)
Jean-Pierre Fleurial, Jet Propulsion Lab. (United States)
Minhee Yun, Jet Propulsion Lab. (United States)
William West, Jet Propulsion Lab. (United States)
Daniel Choi, Jet Propulsion Lab. (United States)

Published in SPIE Proceedings Vol. 5219:
Nanotubes and Nanowires
Akhlesh Lakhtakia; Sergey Maksimenko, Editor(s)

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