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Proceedings Paper

Development of a 1Kx1K GaAs QWIP far IR imaging array
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Paper Abstract

In the on-going evolution of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have developed a 1,024 x 1,024 (1K x 1K), 8.4-9 μm infrared focal plane array (FPA). This 1 megapixel detector array is a hybrid using the Rockwell TCM 8050 silicon readout integrated circuit (ROIC) bump bonded to a GaAs QWIP array fabricated jointly by engineers at the Goddard Space Flight Center (GSFC) and the Army Research Laboratory (ARL). The finished hybrid is thinned at the Jet Propulsion Lab. Prior to this development the largest format array was a 512 x 640 FPA. We have integrated the 1K x 1K array into an imaging camera system and performed tests over the 40K-90K temperature range achieving BLIP performance at an operating temperature of 76K (f/2 camera system). The GaAs array is relatively easy to fabricate once the superlattice structure of the quantum wells has been defined and grown. The overall arrays costs are currently dominated by the costs associated with the silicon readout since the GaAs array fabrication is based on high yield, well-established GaAs processing capabilities. In this paper we will present the first results of our 1K x 1K QWIP array development including fabrication methodology, test data and our imaging results.

Paper Details

Date Published: 12 January 2004
PDF: 11 pages
Proc. SPIE 5167, Focal Plane Arrays for Space Telescopes, (12 January 2004); doi: 10.1117/12.505733
Show Author Affiliations
Murzy Jhabvala, NASA Goddard Space Flight Ctr. (United States)
K. Choi, Army Research Lab. (United States)
Arnold C. Goldberg, Army Research Lab. (United States)
Anh T. La, NASA Goddard Space Flight Ctr. (United States)
Sarath D. Gunapala, Jet Propulsion Lab. (United States)

Published in SPIE Proceedings Vol. 5167:
Focal Plane Arrays for Space Telescopes
Thomas J. Grycewicz; Craig R. McCreight, Editor(s)

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